The technique is based on feeding the
Realistic Power Amplifiers Characterization with Application to Baseband Digital Predistortion for 3G Base Stations. Simulation results are compared to measured results of output signal CIR of a nonlinear amplifier fed by a CDMA signal over a range of power levels. Results have that the predistorter can, Fig.
This paper presents the design of an effective and low cost RF predistorter for use in the base-station high power amplifiers (HPAs) of the North American Digital Cellular (NADC) system. A: attenuator; PS: phase shifter, All figure content in this area was uploaded by William S.W. previously) to form the fundamental signal: the IM3 products, respectively. power levels of the output tones are shown in Table III. This paper presents the design of a circuit to generate 3rd- and 5th-order intermodulation (IM3 and IM5) products used for predistortion of base-station high power amplifiers (HPAs). 3 Simulated signal spectrum at Output #1 in, Fig. Simulations indicate that far higher performance is possible in a more optimized circuit, A Transistor-Based Analog Predistorter With Unequal Delays for Memory Compensation, A simple mixer for generating the 3rd-order intermodulation products used for HPA predistortion, An RF predistorter for base station HPAs of NADC system, Energy-Efficient Digital Predistortion With Lookup Table Training Using Analog Cartesian Feedback, A Novel 3rd-and-5th-Order Predistortion Circuit for 2 GHz Band W-CDMA Amplifier, Analysis and practical performance of a difference frequency technique for improving the multicarrier IMD performance of RF amplifiers, Multi-order predistortion of power amplifiers using a second harmonic based technique, RF Power Amplifiers for Wireless Communications, Realistic power-amplifiers characterization with application to baseband digital predistortion for 3G base stations, Linear frequency translation and amplification with nonlinear components, Carrier-to-Interference Ratio Estimation of Arbitrary Signals Distorted by Nonlinear Devices, SELF-HEATING PROCESS IN MICROWAVE TRANSISTORS, 2-μm, 1.6-mW gated-gm sampler with 72 dB SFDR at 160Ms/s and 320.25-MHz fin, Investigation of partial discharge propagation on compact three phase XLPE cables. 12, pp. is the signal across the anti-parallel Schottky, , which has a half power of (3), can be represented. high-performance but slower sampler. This additional dependence is overlooked in present circuit models and analysis techniques.
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